features high hfe complementary to kta1505 maximum ratings (t a =25 unless otherwise noted ) symbol parameter value units v cbo collector-base voltage 35 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 5 v i c collector current -continuous 500 ma p c collector power dissipation 200 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100 a, i e =0 35 v collector-emitter breakdown voltage v (br)ceo i c = 1ma, i b =0 30 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb = 35v, i e =0 0.1 a emitter cut-off current i ebo v eb = 5v, i c =0 0.1 a h fe1 v ce =1v, i c = 100ma 70 400 dc current gain h fe2 v ce =6v, i c = 400ma o y 25 40 collector-emitter saturation voltage v ce (sat) i c =100ma, i b = 10ma 0.25 v base-emitter voltage v be v ce =1v, i b = 100ma 1 v transition frequency f t v ce =6v, i c =20ma 300 mhz collector output capacitance c ob v cb =6v,i e =0,f=1mh z 7 pf classification of h fe rank o y gr(g) range 70-140 120-240 200-400 marking wo wy wg so t -23 1. base 2. emitter 3. collector KTC3876 transistor (npn) 1 date:2011/05 www.htsemi.com semiconductor jinyu
KTC3876 2 date:2011/05 www.htsemi.com semiconductor jinyu typical characteristics
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